Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
Identifieur interne : 007246 ( Main/Repository ); précédent : 007245; suivant : 007247Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
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Abstract
In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy</title><author><name sortKey="Zhao, Z Y" uniqKey="Zhao Z">Z. Y. Zhao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708-0291</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, NC 27708-0291</wicri:noRegion></affiliation></author><author><name sortKey="Yi, C" uniqKey="Yi C">C. Yi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708-0291</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, NC 27708-0291</wicri:noRegion></affiliation></author><author><name sortKey="Stiff Roberts, A D" uniqKey="Stiff Roberts A">A. D. Stiff-Roberts</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708-0291</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, NC 27708-0291</wicri:noRegion></affiliation></author><author><name sortKey="Hoffman, A J" uniqKey="Hoffman A">A. J. Hoffman</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Wasserman, D" uniqKey="Wasserman D">D. Wasserman</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Gmachl, C" uniqKey="Gmachl C">C. Gmachl</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0090079</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 08-0090079 INIST</idno><idno type="RBID">Pascal:08-0090079</idno><idno type="wicri:Area/Main/Corpus">006E84</idno><idno type="wicri:Area/Main/Repository">007246</idno></publicationStmt><seriesStmt><idno type="ISSN">1350-4495</idno><title level="j" type="abbreviated">Infrared phys. technol.</title><title level="j" type="main">Infrared physics & technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deep level</term><term>Energy level</term><term>Fourier transformation</term><term>Gallium Arsenides</term><term>Heterostructures</term><term>Indium Arsenides</term><term>Infrared detector</term><term>Photodetector</term><term>Quantum dot</term><term>Quantum dot devices</term><term>Radiation detector</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Détecteur rayonnement</term><term>Photodétecteur</term><term>Détecteur IR</term><term>Transformation Fourier</term><term>Niveau énergie</term><term>Point quantique</term><term>Hétérostructure</term><term>Niveau profond</term><term>Indium Arséniure</term><term>Gallium Arséniure</term><term>InAs/GaAs</term><term>GaAs</term><term>9555</term><term>7321L</term><term>8560G</term><term>0757K</term><term>Dispositif point quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1350-4495</s0></fA01><fA03 i2="1"><s0>Infrared phys. technol.</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy</s1></fA08><fA11 i1="01" i2="1"><s1>ZHAO (Z. Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>YI (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>STIFF-ROBERTS (A. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>HOFFMAN (A. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>WASSERMAN (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>GMACHL (C.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708-0291</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>131-135</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9411</s2><s5>354000162746810070</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. 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